Ga(As,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy
作者： P. Krispin , V. Gambin , J. S. Harris , K. H. Ploog
DOI: 10.1063/1.1522823
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摘要: Deep carrier traps in the upper half of band gap Ga(As,N) layers dilute N limit (⩽0.1%) are examined by depth-resolved capacitance spectroscopy on n-type Ga(As,N)/GaAs heterojunctions grown molecular-beam epitaxy. Distinct compositional fluctuations revealed deep-level spectra. Native point defects predominantly formed regions with larger content. High concentrations electron near surface control properties as-grown and lead to strong depletion frequency- as well temperature-dependent (admittance dispersion). The related at can be removed rapid thermal annealing.
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