GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 μm
作者： M. A. Wistey , S. R. Bank , H. B. Yuen , L. L. Goddard , J. S. Harris
DOI: 10.1116/1.1714940
关键词:
摘要: We demonstrate a top emitting, electrically pumped, GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) grown monolithically on GaAs, lasing pulsed at wavelength of 1.460 μm, chuck temperature −10 °C, with threshold current 550 mA (16 kA/cm2) and duty cycle 0.1% for large mesas. Dilute nitrides, such as GaInNAs, have proven effective lasers operating 1.31 but reaching longer wavelengths has difficult due to defects from low-temperature growth, surface roughening, nitrogen-related defects. Reduction oxygen contamination careful attention plasma conditions allow similar extension wavelength, by minimizing crystal introduced during growth. This is the first VCSEL GaAs beyond μm date.
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M. Yamada, T. Anan, K. Kurihara, K. Nishi, K. Tokutome, A. Kamei, S. Sugou, Room temperature low-threshold CW operation of 1.23 [micro sign]m GaAsSb VCSELs on GaAs substrates Electronics Letters. ,vol. 36, pp. 637- 638 ,(2000) , 10.1049/EL:20000483
K.D. Choquette, J.F. Klem, A.J. Fischer, O. Blum, A.A. Allerman, I.J. Fritz, S.R. Kurtz, W.G. Breiland, R. Sieg, K.M. Geib, J.W. Scott, R.L. Naone, Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um Electronics Letters. ,vol. 36, pp. 1388- 1390 ,(2000) , 10.1049/EL:20000928
Gerhard Boehm, Markus Ortsiefer, Robert Shau, Juergen Rosskopf, Christian Lauer, Markus Maute, Fabian Köhler, Felix Mederer, Ralf Meyer, Markus-Christian Amann, InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm Journal of Crystal Growth. ,vol. 251, pp. 748- 753 ,(2003) , 10.1016/S0022-0248(02)02193-0
D. L. Huffaker, D. G. Deppe, K. Kumar, T. J. Rogers, Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers Applied Physics Letters. ,vol. 65, pp. 97- 99 ,(1994) , 10.1063/1.113087
W. Shan, W. Walukiewicz, J. W. Ager, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz, Band Anticrossing in GaInNAs Alloys Physical Review Letters. ,vol. 82, pp. 1221- 1224 ,(1999) , 10.1103/PHYSREVLETT.82.1221
P. Krispin, V. Gambin, J. S. Harris, K. H. Ploog, Ga(As,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy Applied Physics Letters. ,vol. 81, pp. 3987- 3989 ,(2002) , 10.1063/1.1522823
M. Kondow, T. Kitatani, S. Nakatsuka, M.C. Larson, K. Nakahara, Y. Yazawa, M. Okai, K. Uomi, GaInNAs: a novel material for long-wavelength semiconductor lasers IEEE Journal of Selected Topics in Quantum Electronics. ,vol. 3, pp. 719- 730 ,(1997) , 10.1109/2944.640627
J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg, InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m Electronics Letters. ,vol. 36, pp. 1384- 1385 ,(2000) , 10.1049/EL:20000988
S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, W. Ha, J.S. Harris, Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm Electronics Letters. ,vol. 39, pp. 1445- 1446 ,(2003) , 10.1049/EL:20030928