Temperature dependence of hole mobility in GaAs1−xBix alloys
作者： DA Beaton , RB Lewis , M Masnadi-Shirazi , T Tiedje , None
DOI: 10.1063/1.3493734
关键词: Impurity 、 Scattering 、 Range (particle radiation) 、 Phonon scattering 、 Phonon 、 Ionized impurity scattering 、 Condensed matter physics 、 Materials science 、 Electron mobility 、 Gallium arsenide
摘要: The Hall mobility of holes has been measured in GaAs grown at low temperatures and GaAs1−xBix alloys for Bi concentrations x ranging from 0.94% to 5.5%. hole is found decrease with increasing content. temperature dependence the 25 300 K range fit a combination phonon scattering, ionized impurity related scattering. scattering cross-section an isolated estimated be 0.2 nm2. independent highest concentration (x=5.5%), interpreted as being limited by clusters.
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