Direct determination of the electron effective mass of GaAsN by terahertz cyclotron resonance spectroscopy
作者： F. Eßer , O. Drachenko , A. Patanè , M. Ozerov , S. Winnerl
DOI: 10.1063/1.4928623
关键词:
摘要: We use cyclotron resonance THz-spectroscopy in pulsed magnetic fields up to 63 T measure the electron effective mass Si-doped GaAsN semiconductor alloys with nitrogen content 0.2%. This technique directly probes transport properties of N-modified conduction band, particularly mass, which has been discussed controversially experimental and theoretical literature. report a slight increase nonparabolicity N-content for different photon energies agreement two-level band anticrossing model calculations. Furthermore, we show pronounced mobility drop increasing N-content.
scitation.org
harvard.edu
osti.gov
aip.org
sci-hub.se 参考文章(29)
Oleksiy Drachenko, Manfred Helm, Cyclotron Resonance Spectroscopy Semiconductor Research. ,vol. 150, pp. 283- 307 ,(2012) , 10.1007/978-3-642-23351-7_10
E. D. Jones, N. A. Modine, A. A. Allerman, S. R. Kurtz, A. F. Wright, S. T. Tozer, X. Wei, Band structure of In x Ga 1-x As 1-y N y alloys and effects of pressure Physical Review B. ,vol. 60, pp. 4430- 4433 ,(1999) , 10.1103/PHYSREVB.60.4430
W. G. Bi, C. W. Tu, Bowing parameter of the band-gap energy of GaNxAs1−x Applied Physics Letters. ,vol. 70, pp. 1608- 1610 ,(1997) , 10.1063/1.118630
H. Benaissa, A. Zaoui, M. Ferhat, First principles calculations for dilute InAs1−xNx alloys Journal of Applied Physics. ,vol. 102, pp. 113712- ,(2007) , 10.1063/1.2821144
S. A. Zvyagin, M. Ozerov, E. Čižmár, D. Kamenskyi, S. Zherlitsyn, T. Herrmannsdörfer, J. Wosnitza, R. Wünsch, W. Seidel, THz-range free-electron laser ESR spectroscopy: techniques and applications in high magnetic fields arXiv: Materials Science. ,(2009) , 10.1063/1.3155509
J. S. Blakemore, Semiconducting and other major properties of gallium arsenide Journal of Applied Physics. ,vol. 53, ,(1982) , 10.1063/1.331665
Lin-Wang Wang, Large-scale local-density-approximation band gap-corrected GaAsN calculations Applied Physics Letters. ,vol. 78, pp. 1565- 1567 ,(2001) , 10.1063/1.1354162
S. Fahy, A. Lindsay, H. Ouerdane, E. P. O’Reilly, Alloy scattering ofn-type carriers inGaNxAs1−x Physical Review B. ,vol. 74, pp. 035203- ,(2006) , 10.1103/PHYSREVB.74.035203
W. Zawadzki, Electron transport phenomena in small-gap semiconductors Advances in Physics. ,vol. 23, pp. 435- 522 ,(1974) , 10.1080/00018737400101371
A. Lindsay, E. P. O'Reilly, Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys. Physical Review Letters. ,vol. 93, pp. 196402- ,(2004) , 10.1103/PHYSREVLETT.93.196402