Photoluminescence Mechanism in Heavily Si-Doped GaAsN
作者： Toshiki Makimoto , Miki Fujita , Takashi Tsukasaki , Ren Hiyoshi
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摘要: The photoluminescence (PL) mechanism is discussed for heavily Si‐doped GaAsN, and the evaluation method of electron effective mass (m e * ) is proposed using its PL peak energy. …
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F. Eßer, O. Drachenko, A. Patanè, M. Ozerov, S. Winnerl, H. Schneider, M. Helm, Direct determination of the electron effective mass of GaAsN by terahertz cyclotron resonance spectroscopy Applied Physics Letters. ,vol. 107, pp. 062103- ,(2015) , 10.1063/1.4928623
Wataru Okubo, Shuhei Yagi, Yasuto Hijikata, Kentaro Onabe, Hiroyuki Yaguchi, Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys Physica Status Solidi (a). ,vol. 211, pp. 752- 755 ,(2014) , 10.1002/PSSA.201300462
Jiang De‐Sheng, Y. Makita, K. Ploog, H. J. Queisser, Electrical properties and photoluminescence of Te‐doped GaAs grown by molecular beam epitaxy Journal of Applied Physics. ,vol. 53, pp. 999- 1006 ,(1982) , 10.1063/1.330581
S.C. Jain, D.J. Roulston, A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers Solid-State Electronics. ,vol. 34, pp. 453- 465 ,(1991) , 10.1016/0038-1101(91)90149-S
S.C. Jain, J.M. McGregor, D.J. Roulston, P. Balk, Modified simple expression for bandgap narrowing in n-type GaAs Solid-State Electronics. ,vol. 35, pp. 639- 642 ,(1992) , 10.1016/0038-1101(92)90030-G
A. Compaan, S. C. Abbi, H. D. Yao, A. Bhat, D. W. Langer, Excimer and dye laser annealing of silicon‐nitride‐capped, Si‐implanted GaAs Journal of Applied Physics. ,vol. 62, pp. 2561- 2563 ,(1987) , 10.1063/1.339448
Lawrence D. Cloutman, Numerical evaluation of the Fermi-Dirac integrals Astrophysical Journal Supplement Series. ,vol. 71, pp. 677- 699 ,(1989) , 10.1086/191393
J. A. H. Coaquira, M.-A. Pinault, A. P. Litvinchuk, L. Bhusal, Alex Freundlich, Near band-edge luminescence and evidence of the weakening of the N-conduction-band coupling for partially relaxed and high nitrogen composition GaAs1−xNx epilayers Journal of Applied Physics. ,vol. 102, pp. 073716- ,(2007) , 10.1063/1.2786675
U. Tisch, E. Finkman, J. Salzman, The anomalous bandgap bowing in GaAsN Applied Physics Letters. ,vol. 81, pp. 463- 465 ,(2002) , 10.1063/1.1494469
K Laaksonen, H-P Komsa, T T Rantala, R M Nieminen, Nitrogen interstitial defects in GaAs Journal of Physics: Condensed Matter. ,vol. 20, pp. 235231- 235231 ,(2008) , 10.1088/0953-8984/20/23/235231