Rapid thermal annealing of GaNxAs1-x grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence
作者： WK Loke , SF Yoon , SZ Wang , TK Ng , WJ Fan
DOI: 10.1063/1.1454193
关键词: Blueshift 、 Diffraction 、 Wide-bandgap semiconductor 、 Molecular beam epitaxy 、 Gallium arsenide 、 Photoluminescence 、 Optoelectronics 、 Analytical chemistry 、 Materials science 、 Full width at half maximum 、 Lattice constant
摘要: The effect of rapid thermal annealing (RTA) on GaNAs films grown GaAs (100) substrates by radio frequency plasma-assisted solid source molecular beam epitaxy was investigated low-temperature photoluminescence (PL) and high-resolution x-ray diffraction (HR-XRD) measurements. samples with N content 1.3% 2.2% determined experimental curve fitting rocking the dynamical theory, exhibit an overall blueshift in energy 67.7 meV intermediate redshift 42.2 PL spectra when subjected to RTA at 525–850 °C for 10 min. results suggest that layer may have undergone substitutional–interstitial diffusion addition purely outdiffusion nitrogen atoms. Samples annealed 700–750 °C showed 1.7–2.1 times improvement integrated intensity 1.6–1.8 reduction full width half maximum as compared as-grown sample. HR-XRD show no significant changes lattice parameter betwe...
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