Isoelectronic traps in heavily doped GaAs:(In,N)

摘要: GaAs samples doped with low indium and nitrogen contents were investigated by continuous-wave (CWPL) time-resolved photoluminescence (TRPL) at temperature (10 K). The simultaneous incorporation of doping amounts both elements in creates new isoelectronic traps that are not present indium-free GaAs:N. These built from nitrogen-related defects GaAs:N now perturbated one additional atom. They believed to involve a preferential orientation the In atom N near-neighbor positions. experiments consistent assumption clusters perturbed single but definitive assignment cannot be given without addition theoretical modeling. Optical feature characteristics exciton bound these kinds reported: (i) fine structure dipole-forbidden dipole-allowed states (ii) train phonon replicas is typical traps. observation tine trapped excitons made possible because thermodynamic equilibrium between two populations (dipole-allowed states) conditions our measurement. It gives us direct measurement short-range exchange interaction (∼0.7 meV). TRPL allow characterize recombination dynamics for different notably transfer mechanisms among various