1EV GAN x AS 1-x-y SB y material for lattice-matched III–V solar cell implementation on GaAs and Ge
作者： Tien Khee Ng , Soon Fatt Yoon , Kian Hua Tan , Wan Khai Loke , Satrio Wicaksono
DOI: 10.1109/PVSC.2009.5411736
关键词: Arsenic 、 Gallium nitride 、 Solar cell 、 Diode 、 Optoelectronics 、 Materials science 、 Gallium arsenide 、 Lattice (order) 、 Molecular beam epitaxy 、 Current density
摘要: The effect of different arsenic species (As 2 or As 4 ) on the quality molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) GaAs/ GaNAsSb/GaAs p+ n− n+ devices C D) were investigated. improvement in material sample B, as well diode solar cell characteristics C, may suggest a successful defect density manipulation using overpressure for growth.
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