作者: Pranob Misra , Ting Liu , Homan Bernard Yuen , Rebecca Elizabeth Jones
DOI:
关键词: Antimony 、 Lattice (order) 、 Short circuit 、 Indium 、 Open-circuit voltage 、 Solar cell 、 Optoelectronics 、 Materials science 、 Band gap 、 Alloy
摘要: An alloy composition for a subcell of solar cell is provided that has bandgap at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with low antimony (Sb) content and enhanced indium (In) nitrogen (N) content, achieving substantial lattice matching to GaAs Ge substrates providing both high short circuit currents open voltages in GaInNAsSb subcells multijunction cells. The ranges are 0.07≦x≦0.18, 0.025≦y≦0.04 0.001≦z≦0.03.