GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells

摘要: The growth and characterization of tunneling GaAs homojunctions GaAs‐AlGaAs heterojunctions by molecular beam epitaxy for use as optically transparent interconnects in AlGaAs solar cells is described. have been achieved with conductances 300 A/cm2‐V at 0.050 V, p‐AlxGa1−x As/n‐GaAs heterojunction structures x up to 0.4 grown which characteristics comparable interconnects. Thin interconnects, 1000 A total thickness, also fabricated thicker junctions. effect dopant diffusion was found be minimal the 580 °C junction temperature, but annealing these tunnel junctions 650 several minutes caused about 100 distance.