摘要: An AlGaAs tunnel diode with a band gap of 1.6 eV has been fabricated. This provides suitable connecting junction between the high‐ and low‐band cells cascade solar‐cell structure operating at several hundred suns concentration without causing any appreciable loss in efficiency.
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sci-hub.se 参考文章(4)
M. Ilegems, B. Schwartz, L. A. Koszi, R. C. Miller, Integrated multijunction GaAs photodetector with high output voltage Applied Physics Letters. ,vol. 33, pp. 629- 631 ,(1978) , 10.1063/1.90443
K. K. Shih, G. D. Pettit, Properties of Ge-doped GaAs and Alx Ga1−xAs, Sn-doped Alx Ga1−xAs and Si-Te-doped GaAs Journal of Electronic Materials. ,vol. 3, pp. 391- 408 ,(1974) , 10.1007/BF02652949
A. J. SpringThorpe, F. D. King, A. Becke, Te and Ge — doping studies in Ga1−xAlxAs Journal of Electronic Materials. ,vol. 4, pp. 101- 118 ,(1975) , 10.1007/BF02657839
S. M. Bedair, M. F. Lamorte, J. R. Hauser, A two‐junction cascade solar‐cell structure Applied Physics Letters. ,vol. 34, pp. 38- 39 ,(1979) , 10.1063/1.90576