Integrated multijunction GaAs photodetector with high output voltage
作者： M. Ilegems , B. Schwartz , L. A. Koszi , R. C. Miller
DOI: 10.1063/1.90443
关键词:
摘要: Integrated structures consisting of two P‐I‐N double heterostructure GaAs photodetectors, series connected by means a tunnel junction, have been fabricated molecular beam epitaxy. Open‐circuit output voltages, external power efficiencies, and fill factors were 1.777 V, 33.4%, 0.83, respectively, for antireflection‐coated cells excited ∼5 mW optical from focused DH AlGaAs laser emitting at λ=0.815 μm.
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