Molecular Beam Epitaxy of Iii-V Compounds

摘要: An important aspect of the large expansion in development and production solid-state devices has been increasing demand for more sophisticated multilayered semiconductor crystals. During last decade a new thin film growth technique, molecular beam epitaxy (MBE), developed to provide improved control over composition, thickness, doping profile direction on an atomic scale. Based these unique features, offers feasibility tailoring electronic properties crystal its desired function by growing high-quality epitaxial films with predetermined compositional and/or profiles perpendicular surface. The attractive capabilities MBE large-area uniform extreme microscopic dimensions suggest that both characteristic reproducibility microwave optoelectronic device structures may be improved. It is purpose this article review basic process as indicate present trends material problems, — at time continuing innovation show promise future application. emphasis crystalline III–V compound focusing mainly GaAs AlxGa1-xAs.