Invited: Growth and Doping Kinetics in Molecular Beam Epitaxy

摘要: The use of modulated molecular beam techniques to obtain kinetic information relating the growth and doping GaAs films by epitaxy (MBE) is discussed. surface interaction kinetics Ga As4 As2 on {100} oriented surfaces have been studied in some detail measurement lifetimes, sticking coefficients reaction orders. Chemical models which are consistent with measured data produced. This work summarized first part paper. In second behaviour several potential dopant elements (Sn, Mg, Mn Zn) reported, including direct coefficients, diffusion into bulk segregation. Finally, electrical properties tin-doped described relation distribution compensation effects.