Molecular Beam Epitaxial Iii–V Compounds: Dopant Incorporation, Characteristics And Behavior*
作者： Colin E. C. Wood
DOI: 10.1007/978-94-009-5073-3_5
关键词: Materials science 、 Molecular beam 、 Dopant 、 Epitaxy 、 Semiconductor 、 Impurity 、 Kinetics 、 Molecular beam epitaxy 、 Chemical physics
摘要: In this lecture, an attempt is made to present all the available knowledge on incorporation and behavior of impurities into III–V Semiconductors grown by molecular beam epitaxy. Initially, attention paid unintentional with regard their possible origin mechanisms incorporation. Intentional donors acceptors are then systematically treated from viewpoints mechanism, behaviors, solubilities limitations as species for practical applications. Wherever kinetics considered algebraically used give some insight mechanism
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