Si incorporation probabilities and depth distributions in Ga1−xAlxAs films grown by molecular‐beam epitaxy

摘要: The Si incorporation probability σSi of and the segregation‐induced broadening Δs nominally abrupt doping modulations during deposition Ga1−xAlxAs films grown by molecular‐beam epitaxy (MBE) have been measured as a function film growth temperature Ts, alloy composition x As2 overpressure. depth distributions were obtained using secondary ion mass spectrometry (SIMS) calibrated with internal standards. inherent due to SIMS sputter profiling Δ0 was ∼6.5±1 nm. Dopant generated changes in incident flux found exhibit which varied, after subtracting instrumental effects, from Δs≂7 nm at 600 °C 25 725 °C. Thus, segregation MBE, while quite small compared other dopants such Sn, still measurable. fact that increased increasing Ts indicates rate kinetically limited over range investigated these experiments. There slight...