Deposition of CuInSe/sub 2/ by the hybrid sputtering-and-evaporation method
作者： A. Rockett , A. Agarwal , L.C. Yang , E. Banda , G. Kenshole
关键词: Chemical vapor deposition 、 Sputtering 、 Thin film 、 Sputter deposition 、 X-ray photoelectron spectroscopy 、 Analytical chemistry 、 Materials science 、 Evaporation (deposition) 、 Crystallographic defect 、 Heterojunction
摘要: CuInSe/sub 2/ thin films deposited by a hybrid process combining magnetron sputtering of Cu and In with evaporation Se have been analyzed solar cells fabricated. The technique is shown to produce device quality. Heterojunction Mo/CuInSe/sub 2//CdS/ITO/Ni devices photovoltaic conversion efficiencies as high 7.7% tested. Device characteristics for the best include V/sub oc/=0.385 V, J/sub sc/=32.6 mA, fill factor 61.3%. required an air anneal achieve full efficiency. Results microstructural analyses using transmission electron microscopy are reported. results assist in determining what limits performance these devices. As-deposited exhibits no measurable differences compared produced three-source evaporation. All contain microtwins, stacking faults, voids. No evidence was found second phases material metal atom fractions much 4% off stoichiometry. Defect ordering produces features diffraction patterns single-phase at positions not normally allowed chalcopyrite structure. These measurements single crystals grown vertical Bridgeman method Tomlinson (1986). X-ray photoelectron spectroscopy characterizing valence band function film composition also presented. >
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