Compositional and electrical analysis of the multilayers of a CdS/CuInSe2 solar cell
作者： Rommel Noufi , John Dick
DOI: 10.1063/1.335607
关键词: Resistive touchscreen 、 Solar cell 、 Mineralogy 、 Optoelectronics 、 Electrical resistivity and conductivity 、 Chemistry 、 Auger electron spectroscopy 、 Copper 、 Bilayer 、 Thin film 、 Layer (electronics)
摘要: The compositional profiles and the electrical properties of bilayers CdS CuInSe2 films in CdS/CuInSe2 solar cells are presented compared with those individual layers alone. bilayer shows that two have mixed, except for last‐to‐deposit 0.2–0.4 μm, which is semi‐insulating copper poor. This remains p type highly resistive during cell processing steps. consists an almost stoichiometric layer close to junction a top In‐doped low‐resistivity layer. may possibly operate as P‐S‐N device, where S defined largely by
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R. Noufi, R. Axton, C. Herrington, S. K. Deb, Electronic properties versus composition of thin films of CuInSe2 Applied Physics Letters. ,vol. 45, pp. 668- 670 ,(1984) , 10.1063/1.95350
L. L. Kazmerski, O. Jamjoum, P. J. Ireland, R. A. Mickelsen, W. S. Chen, Formation, growth, and stability of the CdS/CuInSe2 interface Journal of Vacuum Science and Technology. ,vol. 21, pp. 486- 490 ,(1982) , 10.1116/1.571744