Mobility‐lifetime products in CuGaSe2

摘要: We report the first accurate determination of mobility‐lifetime products, μτ, in thin films a Cu‐ternary chalcopyrite by photoconductivity and ambipolar diffusion length measurements. found that for Cu‐deficient, nearly intrinsic CuGaSe2 at an illumination about 0.25 AM1 hole’s μτ is 6×10−6 cm2/V while electron’s 2.6×10−9 cm2/V. The lifetime dependence on light intensity was to be characterized exponent γ−1=−0.44.