Room temperature photoconductivity of CuGaSe2

摘要: Abstract The room temperature photoconductive properties of undoped p -type CuGaSe 2 ; have been investigated. Photoconductivity excitation spectra show the structure in intrinsic and extrinsic ranges, which is attributed, respectively to a band-to-band transition free-to-shallow deep-donor transition. Three different decay components are observed range, but only two range. An almost trap-free hole photoconduction, associated with slower components, dominant range exhibits linear relation between photocurrent intensities. In however, trap-controlled electron photocurrent, fastest component, becomes dominant, this results drastic change phase-lag ranges.