Steady-state photocarrier grating technique for the minority-carrier characterisation of thin-film semiconductors

摘要: The steady-state photocarrier grating technique allows the determination of ambipolar diffusion length in low-mobility semiconductors and provides access to minority-carrier properties terms mobility-lifetime product. probes excess carrier distribution under presence a sinusoidally modulated photogeneration rate which is achieved by superposition two coherent laser beams. relatively simple has been established many laboratories successfully applied variety thin-film semiconductors. basic theory method, experimental set-ups, variants realisation grating-period or electric-field variation some various applications method on silicon, chalcopyrite other are presented reviewed this contribution. Worthwhile information can be obtained recombination density-of-states band-gap semiconductor from experiments with combination dark- photoconductivity measurements.