作者: Adrien Bercegol , Daniel Ory , Gilbert El-Hajje , Laurent Lombez
DOI: 10.1109/PVSC.2018.8547274
关键词:
摘要: Photoluminescence recording and analysis is a well-known powerful characterization tool for semiconductors. Here, we show how our time-resolved fluorescence imaging set-up (TR-FLIM) constitute self-consistent method transport properties inside photovoltaic absorbers devices. We apply this to both homogeneous GaAs solar cell, featuring enhanced lateral diffusion, slowly diffusive perovskite absorbers. Relying us on models including in-depth or temporal diffusion recombination properties, could fit key optoelectronic such as the length lifetime of charge carriers, well velocities at critical interfaces.