Nucleation effects during MBE growth of Sn-Doped GaAs
作者： J. J. Harris , B. A. Joyce , J. P. Gowers , J. H. Neave
DOI: 10.1007/BF00617784
关键词:
摘要: The morphology, structure and composition of Sn films on GaAs substrates have been investigated in relation to the predeposition technique used with doping MBE-grown films. It has shown that 3-D aggregates are formed a similar morphology identified which accumulates at surface all Sn-doped way this relates donor incorporation is considered simple model kinetics proposed be consistent observation.
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