Transmission electron microscopy study of defects in Sn-doped GaAs films grown by molecular beam epitaxy
作者： S. H. Chen , C. B. Carter , P. Enquist
DOI: 10.1007/BF00626415
关键词:
摘要: Films of GaAs, heavily doped with Sn, which have been grown by molecular-beam epitaxy are found to contain single-crystal Sn particles situated in the nearsurface region epilayer GaAs. The morphology and chemical composition examined using cross-section transmission electron microscopy combined energy-dispersive x-ray spectroscopy. Different growth conditions were used study Sn-particle formation high-resolution was investigate microstructures. observations discussed terms several models previously proposed for these phenomena.
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