High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy
作者： K. H. Tan , S. F. Yoon , W. K. Loke , S. Wicaksono , K. L. Lew
DOI: 10.1063/1.2730585
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摘要: The authors report on picosecond pulse response GaNAsSb∕GaAs p-i-n photodetectors grown by molecular beam epitaxy in conjunction with a rf plasma-assisted nitrogen source. 2μm thick GaNAsSb photoabsorption layer contains 3.3% of N and 8% Sb resulting dc photoresponse up to 1380nm wavelength. Dark current densities at 0 −5V are 1.6×10−5 13A∕cm2, respectively. photodiodes exhibit record width only 40.5ps (full half maximum) corresponding 4.5GHz bandwidth.
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