Piezoreflectance and photoreflectance study of annealing effects on GaAs0.916Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas‐source molecular beam epitaxy
作者： H. P. Hsu , Y. N. Huang , Y. S. Huang , Y. T. Lin , T. C. Ma
关键词: Spectral line 、 Condensed matter physics 、 Valence band 、 Molecular beam epitaxy 、 Atmospheric temperature range 、 Annealing (metallurgy) 、 Relative intensity 、 Chemistry 、 Thermal conduction
摘要: Thermal annealing effects of GaAs 0.916 Sb 0.084 and 0.906 0.075 N 0.019 films grown on substrates by gas-source molecular beam epitaxy have been characterized piezoreflectance (PzR) photoreflectance (PR). By a comparison relative intensity PzR PR spectra, the identification conduction to heavy-hole (HH) band light-hole (LH) transitions originated from strained induced valence splitting achieved. The near edge transition energies are blue-shifted, HH LH bands is reduced after thermal treatment. found be more pronounced than that . temperature dependences analyzed using Varshni Bose―Einstein expressions in range 15 K 300 K. parameters describe variations evaluated discussed.
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