Multigigabit 1.3μm GaNAsSb∕GaAs Photodetectors
作者： S. Fedderwitz , A. Stöhr , S. F. Yoon , K. H. Tan , M. Weiß
DOI: 10.1063/1.2960540
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摘要: We report on the fabrication of high-speed GaNAsSb photodetector for multigigabit operation at 1.3μm wavelength. The 2μm thick bulk photoabsorption layer contains 3.3% N and 8% Sb, resulting in optical band gap ∼0.9eV suitable near infrared up to wavelengths about 1380nm. By using layer, we have fabricated with high dc responsivity 0.12A∕W exhibits 3dB cutoff frequency wavelength 4.5GHz. Furthermore, 5Gb∕s fiber-optic transmission is demonstrated photodetector.
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