GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer
作者： W.K. Cheah , W.J. Fan , S.F. Yoon , D.H. Zhang , B.K. Ng
关键词:
摘要: GaAs-based double-heterojunction pin photodetectors using In/sub z/Ga/sub 1-z/As/sub 1-xy/N/sub x/Sb/sub y/ in the i layer is fabricated for the first time using the solid source …
sci-hub.se 参考文章(16)
Masahiko Kondow, Kazuhisa Uomi, Kazuhiko Hosomi, Teruo Mozume, Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N Source Japanese Journal of Applied Physics. ,vol. 33, ,(1994) , 10.1143/JJAP.33.L1056
W. K. Cheah, W. J. Fan, K. H. Tan, S. F. Yoon, D. H. Zhang, T. Mei, R. Liu, A. T. S. Wee, Characterizations of In z Ga 1−z As 1−x−y N x Sb y P-i-N structures grown on GaAs by molecular beam epitaxy Journal of Materials Science: Materials in Electronics. ,vol. 16, pp. 301- 307 ,(2005) , 10.1007/S10854-005-0548-9
W.K. Cheah, W.J. Fan, S.F. Yoon, K.H. Tan, R. Liu, A.T.S. Wee, Surfactant and impurity properties of antimony on GaAs and GaAs1−xNx on GaAs [100] by solid source molecular beam epitaxy Thin Solid Films. ,vol. 488, pp. 56- 61 ,(2005) , 10.1016/J.TSF.2005.04.040
Markus Weyers, Michio Sato, Hiroaki Ando, Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers Japanese Journal of Applied Physics. ,vol. 31, ,(1992) , 10.1143/JJAP.31.L853
J F Geisz, D J Friedman, III-N-V semiconductors for solar photovoltaic applications Semiconductor Science and Technology. ,vol. 17, pp. 769- 777 ,(2002) , 10.1088/0268-1242/17/8/305
Sarah Kurtz, J. Webb, L. Gedvilas, D. Friedman, J. Geisz, J. Olson, R. King, D. Joslin, N. Karam, Structural changes during annealing of GaInAsN Applied Physics Letters. ,vol. 78, pp. 748- 750 ,(2001) , 10.1063/1.1345819
Kerstin Volz, Vincent Gambin, Wonill Ha, Mark A. Wistey, Homan Yuen, Seth Bank, James S. Harris, The role of Sb in the MBE growth of (GaIn)(NAsSb) Journal of Crystal Growth. ,vol. 251, pp. 360- 366 ,(2003) , 10.1016/S0022-0248(02)02198-X
L. H. Li, V. Sallet, G. Patriarche, L. Largeau, S. Bouchoule, L. Travers, J. C. Harmand, Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs Applied Physics Letters. ,vol. 83, pp. 1298- 1300 ,(2003) , 10.1063/1.1601671
P Moriarty, PH Beton, Y-R Ma, M Henini, DA Woolf, None, Adsorbed and substituted Sb dimers on GaAs(001). Physical Review B. ,vol. 53, ,(1996) , 10.1103/PHYSREVB.53.R16148
Xiaodong Yang, MJ Jurkovic, JB Heroux, WI Wang, None, Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers Applied Physics Letters. ,vol. 75, pp. 178- 180 ,(1999) , 10.1063/1.124311