Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxy

摘要: GaAsSbN layers with small lattice mismatch to GaAs were studied for possible application as the intrinsic layer in a GaAs-based p‐i‐n photodetector. Our calculation has shown that could be achieved at an Sb∕N atomic ratio of 2.60. was grown GaAs∕GaAsSbN∕GaAs photodetector structure using solid-source molecular beam epitaxy conjunction radio frequency (rf) plasma-assisted nitrogen source and valved antimony cracker source. The kept below 5000ppm, which is sufficient maintain coherent growth ∼0.5μm thick on substrate. temperature varied between 420 520°C, Sb flux equivalent pressure 1.7×10−8 2.3×10−8Torr growth. All samples exhibit room photocurrent response 1.3μm wavelength region. X-ray diffraction two-dimensional maps showed diffuse scattering, may have been cause...