Spinodal decomposition in the GaSb x N y As 1−x−y alloys

作者: Salvador F. D. Albarran , Alicia G. G. Noguez , Vyacheslav. A. Elyukhin , Patricia R. Peralta

DOI: 10.1109/ICEEE.2008.4723368

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摘要: Spinodal decomposition of the GaSbxNyAs1-x-y quaternary alloys lattice-matched to GaAs as result internal deformation and coherency strain energies is described. The are represented quasiternary regular solutions. energy presented by interaction parameters between constituent compounds estimated within framework valence force field model. Ranges spinodal up yles0.035 with without demonstrated.

参考文章(15)
S. F. Díaz Albarrán, V. A. Elyukhin, Spinodal decomposition ranges of alxga1-xnyp1-y and alxga1-xnysb1-y alloys Revista Mexicana De Fisica. ,vol. 51, pp. 605- 609 ,(2005)
V A Elyukhin, S A Nikishin, Internal strain energy of ternary solid solutions of cubic modification Semiconductor Science and Technology. ,vol. 11, pp. 917- 920 ,(1996) , 10.1088/0268-1242/11/6/011
S. Wicaksono, S. F. Yoon, K. H. Tan, W. K. Loke, Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxy Journal of Vacuum Science & Technology B. ,vol. 23, pp. 1054- 1059 ,(2005) , 10.1116/1.1924417
Jeffrey Y. Tsao, James P. Harbison, Materials Fundamentals of Molecular Beam Epitaxy ,(1992)
JC Harmand, A Caliman, EVK Rao, L Largeau, J Ramos, R Teissier, L Travers, G Ungaro, B Theys, IFL Dias, None, GaNAsSb: how does it compare with other dilute III-V-nitride alloys? Semiconductor Science and Technology. ,vol. 17, pp. 778- 784 ,(2002) , 10.1088/0268-1242/17/8/306
Richard M. Martin, Elastic Properties of ZnS Structure Semiconductors Physical Review B. ,vol. 1, pp. 4005- 4011 ,(1970) , 10.1103/PHYSREVB.1.4005
Bernardette Kunert, Jörg Koch, Torsten Torunski, Kerstin Volz, Wolfgang Stolz, MOVPE growth experiments of the novel (GaIn)(NP)/GaP material system Journal of Crystal Growth. ,vol. 272, pp. 753- 759 ,(2004) , 10.1016/J.JCRYSGRO.2004.08.091