MOVPE growth experiments of the novel (GaIn)(NP)/GaP material system
作者： Bernardette Kunert , Jörg Koch , Torsten Torunski , Kerstin Volz , Wolfgang Stolz
DOI: 10.1016/J.JCRYSGRO.2004.08.091
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摘要: Abstract Highly compressively strained (GaIn)(NP) quantum wells have been grown on (1 0 0) GaP substrates by metal organic vapour-phase epitaxy (MOVPE). We achieve a high structural quality of the multiple well structures for this novel, metastable material system. Competition between group-V elements surface determines N incorporation in Ga(NP) as (GaIn)(NP). For ternary system content deposited layers does not depend growth rate contrast to quaternary (GaIn)(NP), where is enhanced with increasing rate. This suggests desorption controlled process In-containing material. accordance strong dependence from temperature and In content. addition — due metastability systems under investigation maximal achievable limited when good crystal be retained.
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