Incorporation effects in MOCVD-grown (In)GaAsN using different nitrogen precursors
作者： A.J Ptak , Sarah Kurtz , C Curtis , R Reedy , J.M Olson
DOI: 10.1016/S0022-0248(02)01412-4
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摘要: Abstract The incorporation of In into InGaAsN grown by MOCVD is known to reduce the nitrogen. addition, most commonly used nitrogen precursors are all extremely inefficient. Growth with NF 3 as precursor relatively insensitive addition indium and has an efficiency much higher than dimethylhydrazine. results from a study four presented, indicating that only In. relative efficiencies for sources also determined, follows: ∼hydrazine>tertiary-butylhydrazine>dimethylhydrazine. We propose simple model based on chemical reactions account differences in efficiency.
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sci-hub.se 参考文章(18)
Energetics of organic free radicals Blackie Academic & Professional. ,(1996) , 10.1007/978-94-009-0099-8
G. Pilcher, J. D. Cox, Thermochemistry of organic and organometallic compounds ,(1970)
H.Ch Alt, A.Yu Egorov, H Riechert, B Wiedemann, J.D Meyer, R.W Michelmann, K Bethge, Local vibrational mode absorption of nitrogen in GaAsN and InGaAsN layers grown by molecular beam epitaxy Physica B-condensed Matter. ,vol. 302, pp. 282- 290 ,(2001) , 10.1016/S0921-4526(01)00442-2
D.J Friedman, A.G Norman, J.F Geisz, Sarah R Kurtz, Comparison of hydrazine, dimethylhydrazine, and t-butylamine nitrogen sources for MOVPE growth of GaInNAs for solar cells Journal of Crystal Growth. ,vol. 208, pp. 11- 17 ,(2000) , 10.1016/S0022-0248(99)00523-0
J.F. Geisz, D.J. Friedman, J.M. Olson, S.R. Kurtz, B.M. Keyes, Photocurrent of 1eV GaInNAs lattice-matched to GaAs Journal of Crystal Growth. ,vol. 195, pp. 401- 408 ,(1998) , 10.1016/S0022-0248(98)00563-6
Markus Weyers, Michio Sato, Hiroaki Ando, Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers Japanese Journal of Applied Physics. ,vol. 31, ,(1992) , 10.1143/JJAP.31.L853
Sarah Kurtz, J. Webb, L. Gedvilas, D. Friedman, J. Geisz, J. Olson, R. King, D. Joslin, N. Karam, Structural changes during annealing of GaInAsN Applied Physics Letters. ,vol. 78, pp. 748- 750 ,(2001) , 10.1063/1.1345819
T Miyamoto, T Kageyama, S Makino, D Schlenker, F Koyama, K Iga, CBE and MOCVD growth of GaInNAs Journal of Crystal Growth. ,vol. 209, pp. 339- 344 ,(2000) , 10.1016/S0022-0248(99)00567-9
Y.‐M. Sun, D. W. Sloan, M. McEllistrem, A. L. Schwaner, J. M. White, Surface chemistry of 1,1‐dimethylhydrazine on GaAs(100) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 13, pp. 1455- 1460 ,(1995) , 10.1116/1.579686
D.J. Friedman, J.F. Geisz, S.R. Kurtz, J.M. Olson, 1-eV solar cells with GaInNAs active layer Journal of Crystal Growth. ,vol. 195, pp. 409- 415 ,(1998) , 10.1016/S0022-0248(98)00561-2