The use of nitrogen to disorder GaInP

摘要: Significant changes in microstructure, surface structure, and alloy composition have been observed GaInP with the addition of nitrogen. These effects occur due to induced by small concentrations Transmission electron microscopy photoluminescence experiments indicate that use surfactant N nearly eliminates CuPtB ordered structure typically seen organometallic vapor phase epitaxially grown Ga0.5In0.5P lattice matched GaAs. In situ photoabsorption measurements show a large change indicating reduces concentration P dimers on surface, decreasing driving force for ordering. Nitrogen also has significant effect Ga/In ratio bulk. The indium content solid is decreased 71% DMHy/III 60 (DMHy—1,1 dimethyl hydrazine). roughens causing formation hillocks rectangular features can be up 50 nm tall.