In1−x Gax P:N Laser Operation (cw, 77°K) on the Nitrogen A‐Line Transition in Indirect Crystals (x ≥ 0.74) and in Direct Crystals above the Fundamental Band Edge (x ≥ 0.71)
作者： N. Holonyak , D. R. Scifres , H. M. Macksey , R. D. Dupuis
DOI: 10.1063/1.1653957
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摘要: The laser operation (cw, 77°K) of In1−xGaxP on the nitrogen A‐line transition in indirect crystals (x≥0.74) and direct above fundamental band edge (x≤0.71) is reported (5450 5470 A, respectively). Thin (1–5 μ) experimental samples are prepared from grown In solution by a modified Bridgman method. doped with GaN or N quartz synthesis ampoule. mounted sandwich configuration indium wetted onto copper heat sink one side thin CdS (10–20 sapphire other side. volume excited tiny spot an argon‐ion focused through window spacer which, sample, forms high‐Q compound cavity.
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