Photoluminescence of nitrogen (N)‐implanted and N‐free In0.30Ga0.70P grown by liquid phase epitaxy
作者： Akira Fujimoto , Yunosuke Makita , Hidetoshi Nojiri , Toshihiko Kanayama , Toshio Tsurushima
DOI: 10.1063/1.328184
关键词: Nitrogen 、 Analytical chemistry 、 Pl spectra 、 Epitaxy 、 Liquid phase 、 Exciton 、 Materials science 、 Binding energy 、 Annealing (metallurgy) 、 Photoluminescence 、 Inorganic chemistry
摘要: Photoluminescence (PL) studies were performed at 2 K for nitrogen (N)‐implanted and N‐free In0.30Ga0.70P crystals, which grown by a step‐cooling liquid‐phase‐epitaxial method. For the N‐implanted In0.30Ga0.70P, an isoelectronic trap was found to be formed annealing temperature over 600 °C. The binding energy of excitons bound above traps determined 92 meV from dependence PL spectra.
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