STIMULATED EMISSION IN In1 ‐xGaxP
作者： R. D. Burnham , N. Holonyak , D. L. Keune , D. R. Scifres , P. D. Dapkus
DOI: 10.1063/1.1653258
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摘要: By a modified Bridgman solution‐growth technique employing small temperature gradient. InP and GaP source crystal are used to saturate an In solution at ∼ 925°C grow In1−xGaxP (x 0.3) 925°C. This material is shown exhibit stimulated emission.
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