Chapter 5 AlGalnP Light-Emitting Diodes
作者： F.A. Kish , R.M. Fletcher
DOI: 10.1016/S0080-8784(08)62406-0
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摘要: Publisher Summary This chapter focuses on a number of topics important to the development and production high-performance aluminium gallium indium phosphide (AlGaInP) light-emitting diodes (LED) devices. Active layer design AlGaInP LEDs is described, with emphasis materials properties AlGalnP alloys. The LED structures that enhance light-output performance are discussed, including current spreading layers, current-blocking window layers. Light extraction technologies performance, such as distributed Bragg reflectors (DBRs) wafer bonding transparent substrates then followed by brief section fabrication process. A discussion device efficiency, color, electrical, reliability data follow. Finally, presents concluding remarks future outlook for LEDs.
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