Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures
作者： Philip T. Barletta , E. Acar Berkman , Baxter F. Moody , Nadia A. El-Masry , Ahmed M. Emara
DOI: 10.1063/1.2721133
关键词: Multiple quantum 、 Chemical vapor deposition 、 Quantum well 、 Metalorganic vapour phase epitaxy 、 Redshift 、 Wide-bandgap semiconductor 、 Materials science 、 Light-emitting diode 、 Active layer 、 Optoelectronics
摘要: … yellow LEDs upon decreasing the injection current at low current regime. In the case of the yellow LED… The growth of long wavelength red ( 630 – 700 nm ) light emitting diodes (LEDs) …
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