引用次数
引用: 2,097
H-指数: 23
I10-指数 : 29
出版物: 69
Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures
Philip T. Barletta , E. Acar Berkman , Baxter F. Moody , Nadia A. El-Masry
Applied Physics Letters 90 ( 15) 151109
76
2007
Pulsed DC Reactive Magnetron Sputtering of AlN Thin Films on High Frequency LTCC Substrates
Jung W. Lee , Jerome J. Cuomo , Baxter F. Moody , Yong S. Cho
MRS Proceedings 783 ( 1) 139 -144
3
2003
GaAsP/lnGaAsN strained layer superlattices for solar cell applications
S.M. Bedair , J.C. Roberts , D. Jung , B.F. Moody
photovoltaic specialists conference 1269 -1272
1
2000
Analysis of p/sup +/-AlGaAs/n/sup +/-InGaP tunnel junction for high solar concentration cascade solar cells
S.M. Bedair , J.C. Roberts , D. Jung , B.F. Moody
photovoltaic specialists conference 1154 -1156
2
2000
Highly transparent aluminum nitride single crystalline layers and devices made therefrom
Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Toru Kinoshita
2017
Strained Layer Superlattice Solar Cells
Baxter F Moody
Ph.D. Thesis
1
2007
Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures
ME Aumer , SF LeBoeuf , BF Moody , SM Bedair
Applied Physics Letters 80 ( 17) 3099 -3101
28
2002
POTENTIAL APPROACHES FOR~ 1.1 EV BANDGAP SOLAR CELLS
JC Roberts , BF Moody , PT Barletta , ME Aumer
Photovoltaics for the 21st Century II: Proceedings of the International Symposium 2001 253 -253
2001
Int. Semiconductor Device Research Symp. Int. Semiconductor Device Research Symp., 2011
Toru Kinoshita , Toshiyuki Obata , Toru Nagashima , Hiroyuki YANAGI
Int. Semiconductor Device Research Symp., 2011 Int. Semiconductor Device Research Symp., 2011, 2011
Toru Kinoshita , Keiichiro Hironaka , Toshiyuki Obata , Toru NAGASHIMA
Weak localization and dimensional crossover in compositionally graded AlxGa1−xN
Ramon Collazo , Seiji Mita , Pramod Reddy , Baxter Moody
Applied Physics Letters 118 ( 8) 082101
1
2021
Weak localization in compositionally graded Al x Ga 1-x N
Ramon Collazo , Seiji Mita , Baxter Moody , Zlatko Sitar
Bulletin of the American Physical Society
2021
Characterization of dislocation arrays in AlN single crystals grown by PVT
Rafael Dalmau , Baxter Moody , Jinqiao Xie , Ramón Collazo
Physica Status Solidi (a) 208 ( 7) 1545 -1547
46
2011
High Quality AlN Single Crystal Substrates for AlGaN-Based Devices
Rafael Dalmau , H. Spalding Craft , Jeffrey Britt , Elizabeth Paisley
Materials Science Forum 924 923 -926
19
2018
Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
Akhil Raj Kumar Kalapala , Dong Liu , Sang June Cho , Jeongpil Park
Gallium Nitride Materials and Devices XIV 10918
1
2019
Single crystal AlN substrates for AlGaN-based UV optoelectronics
Rafael Dalmau , Baxter Moody , H. Spalding Craft , Raoul Schlesser
photonics society summer topical meeting series 31 -32
1
2017
High-reflectivity DUV mirrors prepared by direct sputtering
Hongjun Yang , Deyin Zhao , Shih-Chia Liu , Yonghao Liu
conference on lasers and electro optics 1 -2
2016
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
Benjamin E. Gaddy , Zachary Bryan , Isaac Bryan , Ronny Kirste
Applied Physics Letters 103 ( 16) 161901
60
2013
Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation
Tianyi Zhou , Balaji Raghothamachar , Fangzhen Wu , Rafael Dalmau
Journal of Electronic Materials 43 ( 4) 838 -842
18
2014
Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
Toru Kinoshita , Toshiyuki Obata , Toru Nagashima , Hiroyuki Yanagi
Applied Physics Express 6 ( 9) 092103
90
2013