Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures
作者： ME Aumer , SF LeBoeuf , BF Moody , SM Bedair , K Nam
DOI: 10.1063/1.1469219
关键词:
摘要: The recombination dynamics of optical transitions as well strain effects in AlInGaN/In0.08Ga0.92N quantum wells (QWs) were studied. QW emission energy, photoluminescence decay behavior, line shape, and nonradiative behavior found to be strong functions localization. degree carrier localization was inferred by modeling several aspects obtained from variable temperature time-resolved experiments. According the results, a minimum for unstrained QWs increased either tensile or compressive increased, indicating that InGaN microstructure is function lattice-mismatch-induced experienced during deposition.
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(11)
Leah Bergman, Mitra Dutta, M. A. Stroscio, S. M. Komirenko, Robert J. Nemanich, C. J. Eiting, D. J. H. Lambert, H. K. Kwon, R. D. Dupuis, Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice Applied Physics Letters. ,vol. 76, pp. 1969- 1971 ,(2000) , 10.1063/1.126225
ME Aumer, SF LeBoeuf, SM Bedair, M Smith, JY Lin, HX Jiang, None, Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures Applied Physics Letters. ,vol. 77, pp. 821- 823 ,(2000) , 10.1063/1.1306648
John S Colton, KL Teo, PY Yu, ER Weber, MF Li, W Lui, K Uchida, H Tokunaga, N Akutsu, K Matsumoto, An analysis of temperature dependent photoluminescence line shapes in InGaN Applied Physics Letters. ,vol. 73, pp. 1697- 1699 ,(1998) , 10.1063/1.122249
S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Luminescences from localized states in InGaN epilayers Applied Physics Letters. ,vol. 70, pp. 2822- 2824 ,(1997) , 10.1063/1.119013
M. E. Aumer, S. F. LeBoeuf, F. G. McIntosh, S. M. Bedair, High optical quality AlInGaN by metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 75, pp. 3315- 3317 ,(1999) , 10.1063/1.125336
Yukio Narukawa, Shin Saijou, Yoichi Kawakami, Shigeo Fujita, Takashi Mukai, Shuji Nakamura, Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer Applied Physics Letters. ,vol. 74, pp. 558- 560 ,(1999) , 10.1063/1.123144
S. F. LeBoeuf, M. E. Aumer, S. M. Bedair, Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells Applied Physics Letters. ,vol. 77, pp. 97- 99 ,(2000) , 10.1063/1.126889
Jacques I. Pankove, Optical Processes in Semiconductors ,(1971)
Philippe Riblet, Hideki Hirayama, Atsuhiro Kinoshita, Akira Hirata, Takuo Sugano, Yoshinobu Aoyagi, Determination of photoluminescence mechanism in InGaN quantum wells Applied Physics Letters. ,vol. 75, pp. 2241- 2243 ,(1999) , 10.1063/1.124977
Petr G Eliseev, Piotr Perlin, Jinhyun Lee, Marek Osiński, None, BLUE TEMPERATURE-INDUCED SHIFT AND BAND-TAIL EMISSION IN INGAN-BASED LIGHT SOURCES Applied Physics Letters. ,vol. 71, pp. 569- 571 ,(1997) , 10.1063/1.119797