Comparison of blue and green InGaN∕GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy
作者： Y. D. Qi , H. Liang , D. Wang , Z. D. Lu , W. Tang
DOI: 10.1063/1.1866634
关键词: Wide-bandgap semiconductor 、 Quantum well 、 Electroluminescence 、 Optoelectronics 、 Light-emitting diode 、 Blueshift 、 Materials science 、 Quantum-confined Stark effect 、 Metalorganic vapour phase epitaxy 、 Sapphire 、 Physics and Astronomy (miscellaneous)
摘要: InGaN∕GaN multiple-quantum-well (MQW) blue and green-light-emitting diodes (LEDs) were grown on sapphire substrates using metalorganic vapor phase epitaxy. High-resolution transmission microscopy shows that a much larger density of stacking faults exist in the quantum-well region LEDs than green LEDs. In LEDs, blueshift electroluminescence (EL) emission energy at driving currents is more prominent which explained by different strength quantum-confined Stark effect as result piezoelectric field intensity scales strain relaxation MQWs. The steady broadening EL linewidth higher side with increase current was observed both attributed to band filling effect.
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