An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination

摘要: We present a detailed study of the effects dangling bond passivation and comparison different sulfide processes on properties InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated first organic process for nitride nanowires (NWs). The from Raman spectroscopy, photoluminescence (PL) measurements, X-ray photoelectron spectroscopy (XPS) showed that octadecylthiol (ODT) effectively passivated surface states, altered dynamic charge, thereby recovered band-edge emission. effectiveness with duration was also studied. Moreover, we compared electro-optical performance NW-LEDs at green wavelength before after ODT passivation. have shown Shockley–Read–Hall (SRH) non-radiative recombination can be greatly reduced by ODT, which led to much faster increasing trend quantum efficiency higher peak efficiency. highlighted possibility employing this technique further design produce high NW-lasers.