摘要: This section describes the fabrication and studies of electrically driven green, olivine, amber color nanopyramid GaN light emitting diodes (LEDs). InGaN/GaN multiple quantum wells (MQWs) were grown on array facets. The facets have lower piezoelectric field, as compared with commonly used (0001) c-axis crystal plane, which result in much faster radiative recombination efficiency. is particularly important for high In content MQWs. measured internal efficiencies LED are 30, 25, 21 %, respectively. non-radiative lifetime MQWs also investigated.
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