Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation
作者： H. P. D. Schenk , M. Leroux , P. de Mierry
DOI: 10.1063/1.373850
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摘要: Wurtzite InxGa1−xN (0.01≲x≲0.14) films have been grown by metalorganic vapor phase epitaxy on sapphire substrates. Integrated photoluminescence intensity and line shapes studied as functions of temperature alloy composition x. We compare the “effective” InGaN band gap energy assessed photothermal deflection spectroscopy with a “mean” calculated from room spectra utilizing van Roosbroeck–Shockley relation assuming Gaussian dependence subband absorption coefficient. The Stokes’ shift between 300 K peak is explained this model.
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