Internal quantum efficiency of high-brightness AlGaInP light-emitting devices
作者： P. Altieri , A. Jaeger , R. Windisch , N. Linder , P. Stauss
DOI: 10.1063/1.2085308
关键词:
摘要: The internal quantum efficiency of (AlxGa1−x)0.5In0.5P light-emitting devices (LEDs), with an emission wavelength ranging from 650 to 560 nm, is determined by means a model that takes into account the radiative and nonradiative recombination in active layer, diffusive leakage carriers confining layers, influence photon recycling on light extraction efficiency. evaluation based measurements external LEDs as function operating current temperature. analysis provides dependence both well carrier leakage.
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