作者: Oskari Heikkilä , Jani Oksanen , Jukka Tulkki
DOI: 10.1063/1.3125514
关键词: Quantum efficiency 、 Light-emitting diode 、 Diode 、 Thermal management of high-power LEDs 、 Optoelectronics 、 Semiconductor 、 Materials science 、 Electroluminescence 、 Doping 、 Light emission
摘要: We discuss the ultimate limit of performance semiconductor light-emitting diodes (LEDs) and its dependence on temperature. It is known that in high quality materials it is, principle, possible to reach wall plug efficiencies exceeding unity, which allows electroluminescent cooling addition very efficiency light emission. Our simulation results suggest a few fairly simple measures may further improve external quantum (EQE) LEDs toward limit. These include reducing current density, modifying LED structure by making thicker active regions barrier layers, doping material. calculations also indicate that, contrary present understanding, operating at relatively temperatures 400–600 K may, fact, performance.