Band-to-band Auger effect on the output power saturation in InGaAsP LED's
作者： A. Sugimura
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摘要: Band-to-band Auger effect on output power saturation in InGaAsP light emitting diodes is studied theoretically. The CHSH-type transition rate calculated using an approximation formula which involves a weak degeneracy effect. Calculated carrier lifetime and radiance versus current density for 1.3 μm LED's agree with reported experimental results. recombination of the CHSH process greatly affects LED's.
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