作者: I. V. Rozhansky , D. A. Zakheim
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摘要: The work is devoted to explanation of the decrease external quantum efficiency (QE) with increase pumping density typically observed for AlInGaN heterostrucures. It shown as a result numerical modeling that while QE at low due competition between radiative and non-radiative recombination, large caused by injection holes into active area. A modified LED heterostructure suggested, which effect decreasing not expected. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)