Optical and electrical properties of Mg-doped p-type AlxGa1−xN
作者： J. Li , T. N. Oder , M. L. Nakarmi , J. Y. Lin , H. X. Jiang
DOI: 10.1063/1.1450038
关键词: Materials science 、 Metalorganic vapour phase epitaxy 、 Analytical chemistry 、 Chemical vapor deposition 、 Photoluminescence 、 Doping 、 Activation energy 、 Acceptor 、 Hall effect 、 Electrical resistivity and conductivity
摘要: Mg-doped AlxGa1−xN epilayers with Al content up to 0.27 were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). p-type conduction in these alloys has been achieved, as confirmed variable temperature Hall-effect measurements. Emission lines of band-to-impurity transitions free electrons neutral Mg acceptors well localized excitons have observed the alloys. The acceptor activation energies EA deduced from photoluminescence spectra and found increase agreed very those obtained Hall From measured energy a function content, versus x resistivity high contents can be deduced. Our results thus indicated that alternative methods for AlGaN must developed. also shown PL measurements provide direct means obtaining EA, especially where this canno...
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(11)
HS Kim, RA Mair, J Li, JY Lin, HX Jiang, None, Time-resolved photoluminescence studies of AlxGa1−xN alloys Applied Physics Letters. ,vol. 76, pp. 1252- 1254 ,(2000) , 10.1063/1.126000
Mariko Suzuki, Johji Nishio, Masaaki Onomura, Chie Hongo, Doping characteristics and electrical properties of Mg-doped AlGaN grown by atmospheric-pressure MOCVD Journal of Crystal Growth. ,vol. 189, pp. 511- 515 ,(1998) , 10.1016/S0022-0248(98)00341-8
Lisa Sugiura, Mariko Suzuki, Johji Nishio, Kazuhiko Itaya, Yoshihiro Kokubun, Masayuki Ishikawa, Characteristics of Mg-Doped GaN and AlGaN Grown by H2-Ambient and N2-Ambient Metalorganic Chemical Vapor Deposition Japanese Journal of Applied Physics. ,vol. 37, pp. 3878- 3881 ,(1998) , 10.1143/JJAP.37.3878
Isamu Akasaki, Hiroshi Amano, Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters Japanese Journal of Applied Physics. ,vol. 36, pp. 5393- 5408 ,(1997) , 10.1143/JJAP.36.5393
M Smith, GD Chen, J Yi Lin, HX Jiang, A Salvador, BN Sverdlov, A Botchkarev, H Morkoc, B Goldenberg, None, Mechanisms of band‐edge emission in Mg‐doped p‐type GaN Applied Physics Letters. ,vol. 68, pp. 1883- 1885 ,(1996) , 10.1063/1.116282
T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, M. Koike, P-TYPE CONDUCTION IN MG-DOPED GAN AND AL0.08GA0.92N GROWN BY METALORGANIC VAPOR PHASE EPITAXY Applied Physics Letters. ,vol. 65, pp. 593- 594 ,(1994) , 10.1063/1.112309
Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi, Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2) Japanese Journal of Applied Physics. ,vol. 39, pp. 337- ,(2000) , 10.1143/JJAP.39.L337
Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatu, N. Sawaki, I. Akasaki, Energy band‐gap bowing parameter in an AlxGa1−x N alloy Journal of Applied Physics. ,vol. 61, pp. 4540- 4543 ,(1987) , 10.1063/1.338387
Jian-Bai Xia, K. W. Cheah, Xiao-Liang Wang, Dian-Zhao Sun, Mei-Ying Kong, Energy bands and acceptor binding energies of GaN Physical Review B. ,vol. 59, pp. 10119- 10124 ,(1999) , 10.1103/PHYSREVB.59.10119
Francisco Mireles, Sergio E. Ulloa, ACCEPTOR BINDING ENERGIES IN GAN AND ALN Physical Review B. ,vol. 58, pp. 3879- 3887 ,(1998) , 10.1103/PHYSREVB.58.3879