ACCEPTOR BINDING ENERGIES IN GAN AND ALN
作者： Francisco Mireles , Sergio E. Ulloa
关键词: Acceptor 、 Binding energy 、 Ionization energy 、 Wurtzite crystal structure 、 Pseudopotential 、 Atomic physics 、 Polaron 、 Electronic band structure 、 Materials science 、 Ionization
摘要: … The applicability of EMT for the calculation of impurity levels with 0.2–0.4 eV binding energies is then verified post facto, likely due to the large band gap in these materials, which yields …
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Otfried Madelung, Semiconductors - Basic Data ,(2012)
Grigoriĭ Ezekielevich Pikus, Gennadiĭ Levikovich Bir, Symmetry and strain-induced effects in semiconductors ,(1974)
Satoshi Itoh, Norikazu Nakayama, Toyoharu Ohata, Masafumi Ozawa, Hiroyuki Okuyama, Kazushi Nakano, Akira Ishibashi, Masao Ikeda, Yoshifumi Mori, 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage Japanese Journal of Applied Physics. ,vol. 32, pp. L1530- L1532 ,(1993) , 10.1143/JJAP.32.L1530
Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin-ichi Nagahama, High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures Japanese Journal of Applied Physics. ,vol. 34, ,(1995) , 10.1143/JJAP.34.L797
Hiromitsu Sakai, Takashi Koide, Hiroyuki Suzuki, Machiko Yamaguchi, Shiro Yamasaki, MasayoshiKoike, Hiroshi Amano, Isamu Akasaki, GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy Japanese Journal of Applied Physics. ,vol. 34, ,(1995) , 10.1143/JJAP.34.L1429
R. J. Molnar, R. Singh, T. D. Moustakas, Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy Applied Physics Letters. ,vol. 66, pp. 268- 270 ,(1995) , 10.1063/1.113513
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates Applied Physics Letters. ,vol. 68, pp. 2105- 2107 ,(1996) , 10.1063/1.115599
R. L. Aggarwal, P. A. Maki, R. J. Molnar, Z.‐L. Liau, I. Melngailis, Optically pumped GaN/Al0.1Ga0.9N double‐heterostructure ultraviolet laser Journal of Applied Physics. ,vol. 79, pp. 2148- 2150 ,(1996) , 10.1063/1.361044
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, InGaN-Based Multi-Quantum-Well-Structure Laser Diodes Japanese Journal of Applied Physics. ,vol. 35, pp. L74- L76 ,(1996) , 10.1143/JJAP.35.L74
B. W. Lim, Q. C. Chen, J. Y. Yang, M. Asif Khan, High responsitivity intrinsic photoconductors based on AlxGa1−xN Applied Physics Letters. ,vol. 68, pp. 3761- 3762 ,(1996) , 10.1063/1.115998